MPN

Infineon HEXFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF

RS Stock No.:: 222-4747
Mfr. Part No.:: IRFH8311TRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF

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Subtotal (1 pack of 15 units)*

£11.10

(exc. VAT)

£13.35

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,425 unit(s) ready to ship

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Units	Per unit	Per Pack*
15 - 60	£0.74	£11.10
75 - 135	£0.704	£10.56
150 - 360	£0.688	£10.32
375 - 735	£0.644	£9.66
750 +	£0.599	£8.99

*price indicative

RS Stock No.:: 222-4747
Mfr. Part No.:: IRFH8311TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PQFN
	Series	HEXFET
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	2.1mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	96W
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Height	1.17mm
	Standards/Approvals	RoHS
	Width	6.15 mm
	Length	5mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 80V
	Package Type PQFN
	Series HEXFET
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 2.1mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 96W
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Height 1.17mm
	Standards/Approvals RoHS
	Width 6.15 mm
	Length 5mm
	Automotive Standard No

Datasheet - IRFH8311TRPBF

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDSon (<1.15 mΩ)

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg tested

Low Profile (<0.9 mm)