Infineon HEXFET Silicon N-Channel MOSFET, 30 A, 80 V, 4-Pin PQFN 5 x 6 IRFH8311TRPBF
- RS Stock No.:
- 222-4747
- Mfr. Part No.:
- IRFH8311TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 15 units)*
£11.10
(exc. VAT)
£13.35
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,425 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 60 | £0.74 | £11.10 |
| 75 - 135 | £0.704 | £10.56 |
| 150 - 360 | £0.688 | £10.32 |
| 375 - 735 | £0.644 | £9.66 |
| 750 + | £0.599 | £8.99 |
*price indicative
- RS Stock No.:
- 222-4747
- Mfr. Part No.:
- IRFH8311TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 80 V | |
| Series | HEXFET | |
| Package Type | PQFN 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.0021 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 80 V | ||
Series HEXFET | ||
Package Type PQFN 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.0021 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDSon (<1.15 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Related links
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