MPN

Infineon HEXFET Type N-Channel MOSFET, 12.5 A, 80 V PQFN IRL80HS120

RS Stock No.:: 217-2640
Mfr. Part No.:: IRL80HS120
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 12.5 A, 80 V PQFN IRL80HS120

Subtotal (1 pack of 20 units)*

£9.42

(exc. VAT)

£11.30

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

11,860 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 +	£0.471	£9.42

*price indicative

RS Stock No.:: 217-2640
Mfr. Part No.:: IRL80HS120
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12.5A
	Maximum Drain Source Voltage Vds	80V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	42mΩ
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	7nC
	Maximum Power Dissipation Pd	11.5W
	Maximum Operating Temperature	175°C
	Height	2.1mm
	Width	1 mm
	Standards/Approvals	No
	Length	2.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12.5A
	Maximum Drain Source Voltage Vds 80V
	Series HEXFET
	Package Type PQFN
	Mount Type Surface
	Maximum Drain Source Resistance Rds 42mΩ
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 7nC
	Maximum Power Dissipation Pd 11.5W
	Maximum Operating Temperature 175°C
	Height 2.1mm
	Width 1 mm
	Standards/Approvals No
	Length 2.1mm
	Automotive Standard No

Datasheet - IRL80HS120

The Infineon Available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.

Lowest FOM (R DS(on) x Q g/gd)

Optimized Q g, C oss, and Q rr for fast switching

Logic level compatibility

Tiny PQFN 2x2mm package