Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 5.4 A, 100 V, 8-Pin SO-8 IRF7490TRPBF

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Subtotal 75 units (supplied on a continuous strip)*

£50.625

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£60.75

(inc. VAT)

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Packaging Options:
RS Stock No.:
220-7479P
Mfr. Part No.:
IRF7490TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

100 V

Package Type

SO-8

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.039 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

The Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100KHz
Industry standard surface-mount power package
Capable of being wave-soldered