Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 7 A, 800 V Enhancement, 3-Pin TO-251

RS Stock No.:: 220-7440
Mfr. Part No.:: IPS80R750P7AKMA1
Brand:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 7 A, 800 V Enhancement, 3-Pin TO-251

Bulk discount available

Subtotal (1 tube of 75 units)*

£77.70

(exc. VAT)

£93.225

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 05 October 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
75 - 75	£1.036	£77.70
150 - 300	£0.829	£62.18
375 - 675	£0.787	£59.03
750 - 1425	£0.746	£55.95
1500 +	£0.715	£53.63

*price indicative

RS Stock No.:: 220-7440
Mfr. Part No.:: IPS80R750P7AKMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	7A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-251
	Series	CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	750mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	17nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	51W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	6.7mm
	Standards/Approvals	No
	Height	6.22mm
	Width	2.35 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 7A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-251
	Series CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 750mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 17nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 51W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 6.7mm
	Standards/Approvals No
	Height 6.22mm
	Width 2.35 mm
	Automotive Standard No

Datasheet - IPS80R750P7AKMA1

The Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class FOM R DS(on) * E oss; reduced Qg, C is and C oss

Best-in-class DPAK R DS(on) of 280mΩ

Best-in-class V (GS)the of 3V and smallest V (GS)the variation of ± 0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to Cool MOS™ C3

Enabling higher power density designs, BOM savings and lower assembly cost

Easy to drive and to design-in

Better production yield by reducing ESD related failures

Less production issues and reduced field returns

Easy to select right parts for fine tuning of designs