Infineon HEXFET N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK IRFS4229TRLPBF
- RS Stock No.:
- 217-2633
- Mfr. Part No.:
- IRFS4229TRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£1,240.00
(exc. VAT)
£1,488.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,400 unit(s) ready to ship
- Plus 999,996,800 unit(s) shipping from 01 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | £1.55 | £1,240.00 |
*price indicative
- RS Stock No.:
- 217-2633
- Mfr. Part No.:
- IRFS4229TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45 A | |
| Maximum Drain Source Voltage | 250 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 48 mO | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 250 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 48 mO | ||
Number of Elements per Chip 1 | ||
The Infineon HEXFET® Power MOSFET is specifically designed for Sustain
Energy Recovery & Pass switch applications in plasma Display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E pulse rating.
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
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