Infineon HEXFET N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK IRFS4229TRLPBF
- RS Stock No.:
- 217-2634
- Mfr. Part No.:
- IRFS4229TRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£15.70
(exc. VAT)
£18.85
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,620 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £3.14 | £15.70 |
| 25 - 45 | £2.764 | £13.82 |
| 50 - 120 | £2.606 | £13.03 |
| 125 - 245 | £2.418 | £12.09 |
| 250 + | £2.23 | £11.15 |
*price indicative
- RS Stock No.:
- 217-2634
- Mfr. Part No.:
- IRFS4229TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 48 mO | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 48 mO | ||
Number of Elements per Chip 1 | ||
The Infineon HEXFET® Power MOSFET is specifically designed for Sustain
Energy Recovery & Pass switch applications in plasma Display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E pulse rating.
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Related links
- Infineon HEXFET N-Channel MOSFET 250 V, 3-Pin D2PAK IRFS4229TRLPBF
- Vishay N-Channel MOSFET 250 V, 3-Pin D2PAK SUM45N25-58-E3
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin D2PAK IRFS7437TRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin D2PAK AUIRFS8407TRL
- Infineon N-Channel MOSFET 60 V, 3-Pin D2PAK IPB057N06NATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin D2PAK IPB45N06S4L08ATMA3
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin D2PAK IRFZ44ESTRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRL2910STRLPBF