MPN

Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247 IRF200P223

RS Stock No.:: 217-2596
Mfr. Part No.:: IRF200P223
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247 IRF200P223

Bulk discount available

Subtotal (1 pack of 5 units)*

£24.25

(exc. VAT)

£29.10

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Final 1,105 unit(s), ready to ship

Units	Per unit	Per Pack*
5 - 5	£4.85	£24.25
10 - 20	£4.316	£21.58
25 - 45	£4.026	£20.13
50 - 120	£3.734	£18.67
125 +	£3.396	£16.98

*price indicative

RS Stock No.:: 217-2596
Mfr. Part No.:: IRF200P223
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	11.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	55nC
	Maximum Power Dissipation Pd	313W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	5.31 mm
	Length	15.87mm
	Height	34.9mm
	Automotive Standard	No
	Distrelec Product Id	304-31-968

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 11.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 55nC
	Maximum Power Dissipation Pd 313W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 5.31 mm
	Length 15.87mm
	Height 34.9mm
	Automotive Standard No
	Distrelec Product Id 304-31-968

Datasheet - IRF200P223

The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dv/dt and di/dt Capability

Pb-Free ; RoHS Compliant ; Halogen-Free