Infineon HEXFET N-Channel MOSFET, 100 A, 200 V, 3-Pin TO-247 IRF200P223
- RS Stock No.:
- 217-2596
- Mfr. Part No.:
- IRF200P223
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£24.25
(exc. VAT)
£29.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,145 unit(s) ready to ship
- Plus 999,998,850 unit(s) shipping from 05 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £4.85 | £24.25 |
| 10 - 20 | £4.316 | £21.58 |
| 25 - 45 | £4.026 | £20.13 |
| 50 - 120 | £3.734 | £18.67 |
| 125 + | £3.396 | £16.98 |
*price indicative
- RS Stock No.:
- 217-2596
- Mfr. Part No.:
- IRF200P223
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 11.5 mO | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 200 V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11.5 mO | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Pb-Free
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Pb-Free
RoHS Compliant
Halogen-Free
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