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Infineon CoolMOS CE Type N-Channel MOSFET, 2.6 A, 600 V Enhancement, 3-Pin TO-251 IPS60R3K4CEAKMA1

RS Stock No.:: 217-2577
Mfr. Part No.:: IPS60R3K4CEAKMA1
Brand:: Infineon

Infineon CoolMOS CE Type N-Channel MOSFET, 2.6 A, 600 V Enhancement, 3-Pin TO-251 IPS60R3K4CEAKMA1

Subtotal (1 pack of 50 units)*

£5.10

(exc. VAT)

£6.10

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

850 unit(s) ready to ship

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Units	Per unit	Per Pack*
50 +	£0.102	£5.10

*price indicative

RS Stock No.:: 217-2577
Mfr. Part No.:: IPS60R3K4CEAKMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.6A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS CE
	Package Type	TO-251
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.4Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	6.7nC
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	38W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Standards/Approvals	No
	Width	2.4 mm
	Height	9.82mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.6A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS CE
	Package Type TO-251
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.4Ω
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 6.7nC
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 38W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Standards/Approvals No
	Width 2.4 mm
	Height 9.82mm
	Automotive Standard No

Datasheet - IPS60R3K4CEAKMA1

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g