Infineon CoolMOS CE Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-251 IPS60R800CEAKMA1

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Subtotal (1 pack of 25 units)*

£15.20

(exc. VAT)

£18.25

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 100£0.608£15.20
125 - 225£0.474£11.85
250 - 600£0.444£11.10
625 - 1225£0.414£10.35
1250 +£0.383£9.58

*price indicative

Packaging Options:
RS Stock No.:
214-9103
Mfr. Part No.:
IPS60R800CEAKMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-251

Series

CoolMOS CE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

17.2nC

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

74W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Height

6.22mm

Width

2.4 mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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