Infineon CoolMOS CE Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-251 IPS60R800CEAKMA1

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Subtotal (1 pack of 25 units)*

£14.075

(exc. VAT)

£16.90

(inc. VAT)

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  • Plus 1,250 unit(s) shipping from 01 June 2026
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Units
Per unit
Per Pack*
25 - 100£0.563£14.08
125 - 225£0.439£10.98
250 - 600£0.411£10.28
625 - 1225£0.383£9.58
1250 +£0.354£8.85

*price indicative

Packaging Options:
RS Stock No.:
214-9103
Mfr. Part No.:
IPS60R800CEAKMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-251

Series

CoolMOS CE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

17.2nC

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

74W

Maximum Operating Temperature

150°C

Length

6.73mm

Height

6.22mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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