Infineon CoolMOS™ CE N-Channel MOSFET, 8.4 A, 600 V, 3-Pin IPAK IPS60R800CEAKMA1
- RS Stock No.:
- 214-9102
- Mfr. Part No.:
- IPS60R800CEAKMA1
- Brand:
- Infineon
Subtotal (1 tube of 75 units)*
£36.45
(exc. VAT)
£43.725
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,200 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 + | £0.486 | £36.45 |
*price indicative
- RS Stock No.:
- 214-9102
- Mfr. Part No.:
- IPS60R800CEAKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.4 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | CoolMOS™ CE | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.8 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.4 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ CE | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.8 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Easy to use/drive
Very high commutation ruggedness
Qualified for standard grade applications
Very high commutation ruggedness
Qualified for standard grade applications
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