Infineon CoolMOS™ CE N-Channel MOSFET, 2.6 A, 600 V, 3-Pin IPAK IPS60R3K4CEAKMA1
- RS Stock No.:
- 217-2576
- Mfr. Part No.:
- IPS60R3K4CEAKMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 75 units)*
£13.35
(exc. VAT)
£16.05
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 825 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | £0.178 | £13.35 |
| 150 - 300 | £0.134 | £10.05 |
| 375 - 675 | £0.125 | £9.38 |
| 750 - 1800 | £0.117 | £8.78 |
| 1875 + | £0.114 | £8.55 |
*price indicative
- RS Stock No.:
- 217-2576
- Mfr. Part No.:
- IPS60R3K4CEAKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.6 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | IPAK SL (TO-251 SL) | |
| Series | CoolMOS™ CE | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.4 Ohm | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.6 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type IPAK SL (TO-251 SL) | ||
Series CoolMOS™ CE | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.4 Ohm | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Related links
- Infineon CoolMOS™ CE N-Channel MOSFET 600 V, 3-Pin IPAK IPS60R3K4CEAKMA1
- Vishay N-Channel MOSFET 20 V, 3-Pin SOT-23 SI2302DDS-T1-GE3
- Vishay N-Channel MOSFET 200 V, 3-Pin DPAK IRFR210TRPBF
- Infineon SIPMOS® N-Channel MOSFET 60 V, 3-Pin SOT-223 BSP318SH6327XTSA1
- Vishay N-Channel MOSFET 20 V, 3-Pin SOT-23 SI2302CDS-T1-E3
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin SOT-223 IRFL4315TRPBF
- Diodes Inc DMN3060LW N-Channel MOSFET 30 V, 3-Pin SOT-323 DMN3060LW-7
- Diodes Inc DMN3060LWQ N-Channel MOSFET 30 V, 3-Pin SOT-323 DMN3060LWQ-7