Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-252 IPD70R1K4P7SAUMA1
- RS Stock No.:
- 214-9047
- Mfr. Part No.:
- IPD70R1K4P7SAUMA1
- Brand:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | £0.348 | £17.40 |
| 100 - 200 | £0.268 | £13.40 |
| 250 - 450 | £0.251 | £12.55 |
| 500 - 1200 | £0.233 | £11.65 |
| 1250 + | £0.216 | £10.80 |
*price indicative
- RS Stock No.:
- 214-9047
- Mfr. Part No.:
- IPD70R1K4P7SAUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Power Dissipation Pd | 22.7W | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Power Dissipation Pd 22.7W | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET, 700V Maximum Drain Source Voltage, 4A Maximum Continuous Drain Current - IPD70R1K4P7SAUMA1
This MOSFET is a high-voltage switching device designed for power conversion and drive applications. It operates across a wide temperature range and provides N-channel enhancement-mode switching capability suitable for surface-mounted assemblies in demanding electrical systems.
Features and Benefits:
• 700 V drain rating enables high-voltage switching applications
• 4 A continuous drain current supports moderate load currents
• 1.4 Ω low RDS(on) reduces conduction losses under load
• 22.7 W power dissipation allows sustained thermal handling
• 4.7 nC typical gate charge enables efficient switching control
• 16 V gate rating permits substantial gate-drive headroom
• 4 A continuous drain current supports moderate load currents
• 1.4 Ω low RDS(on) reduces conduction losses under load
• 22.7 W power dissipation allows sustained thermal handling
• 4.7 nC typical gate charge enables efficient switching control
• 16 V gate rating permits substantial gate-drive headroom
Applications
• Suitable for SMPS primary switch stages
• Ideal for motor-drive half-bridge switches
• Used with high-voltage industrial power supplies
• Can be used for switch-mode power regulation
• Appropriate for surface-mount power assemblies
• Ideal for motor-drive half-bridge switches
• Used with high-voltage industrial power supplies
• Can be used for switch-mode power regulation
• Appropriate for surface-mount power assemblies
What thermal range is acceptable for operation?
It is specified to function from −40 °C up to 150 °C.
What package style and mounting method does it use?
It is supplied in a TO-252 package and intended for surface mounting.
How many pins are available for PCB connection?
There are three electrical pins for standard MOSFET connection.
What is the typical forward voltage when conducting?
The forward voltage under specified conditions is 0.9 V.
What channel characteristics affect device behaviour?
It is an N-channel, enhancement-mode device with specified gate and drain limits.
Related links
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