Toshiba TPH1R306PL Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin SOP TPH1R306PL,L1Q(M
- RS Stock No.:
- 206-9790
- Mfr. Part No.:
- TPH1R306PL,L1Q(M
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
£11.70
(exc. VAT)
£14.05
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 3,835 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.34 | £11.70 |
| 50 - 495 | £1.822 | £9.11 |
| 500 - 995 | £1.488 | £7.44 |
| 1000 - 2495 | £1.46 | £7.30 |
| 2500 + | £1.436 | £7.18 |
*price indicative
- RS Stock No.:
- 206-9790
- Mfr. Part No.:
- TPH1R306PL,L1Q(M
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOP | |
| Series | TPH1R306PL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 170W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Length | 6mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOP | ||
Series TPH1R306PL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 170W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5 mm | ||
Length 6mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Toshiba silicon N-channel MOSFET having high-speed switching properties. It is mainly used in high-efficiency DC-DC converters, switching voltage regulators and motor drivers.
Low drain-source on-resistance 1.0 m?
Storage temperature -55 to 175°C
Related links
- Toshiba TPH1R306PL Silicon N-Channel MOSFET 60 VL1Q(M
- Toshiba TPHR8504PL Silicon N-Channel MOSFET 40 VL1Q(M
- Toshiba Silicon N-Channel MOSFET 75 VL1Q(M
- Toshiba TPH3R704PC Silicon N-Channel MOSFET 40 VLQ(S
- Toshiba N-Channel MOSFET 60 VL1Q(M
- Vishay Silicon N-Channel MOSFET 40 V, 8-Pin SO-8 SIR638ADP-T1-UE3
- Infineon HEXFET Silicon N-Channel MOSFET 25 V, 4-Pin PQFN 5 x 6 IRFH5250TRPBF
- Vishay Dual Silicon N-Channel MOSFET 40 V, 4-Pin 8 x 8L SQJQ936EL-T1_GE3