Toshiba N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON TPN14006NH,L1Q(M

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Subtotal (1 reel of 5000 units)*

£1,635.00

(exc. VAT)

£1,960.00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 - 5000£0.327£1,635.00
10000 +£0.302£1,510.00

*price indicative

RS Stock No.:
171-2206
Mfr. Part No.:
TPN14006NH,L1Q(M
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

60 V

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

3.1mm

Number of Elements per Chip

1

Width

3.1mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.85mm

RoHS Status: Exempt

Switching Voltage Regulators
Motor Drivers
DC-DC Converters
High-speed switching
Small gate charge: QSW = 5.5 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)

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