Toshiba N-Channel MOSFET, 92 A, 40 V, 8-Pin TSON TPN3R704PL
- RS Stock No.:
- 171-2363
- Mfr. Part No.:
- TPN3R704PL
- Brand:
- Toshiba
Subtotal (1 pack of 5 units)*
£4.60
(exc. VAT)
£5.50
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 27 March 2026
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £0.92 | £4.60 |
50 - 95 | £0.778 | £3.89 |
100 - 995 | £0.64 | £3.20 |
1000 + | £0.622 | £3.11 |
*price indicative
- RS Stock No.:
- 171-2363
- Mfr. Part No.:
- TPN3R704PL
- Brand:
- Toshiba
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 92 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | TSON | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 6 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.4V | |
Minimum Gate Threshold Voltage | 1.4V | |
Maximum Power Dissipation | 86 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Typical Gate Charge @ Vgs | 27 nC @ 10 V | |
Length | 3.1mm | |
Number of Elements per Chip | 1 | |
Width | 3.1mm | |
Maximum Operating Temperature | +175 °C | |
Forward Diode Voltage | 1.2V | |
Height | 0.85mm | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 92 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.4V | ||
Maximum Power Dissipation 86 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 27 nC @ 10 V | ||
Length 3.1mm | ||
Number of Elements per Chip 1 | ||
Width 3.1mm | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.2V | ||
Height 0.85mm | ||
RoHS Status: Exempt
Switching Voltage Regulators
Motor Drivers
High-speed switching
Small gate charge: QSW = 8.1 nC (typ.)
Small output charge: Qoss = 20.2 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 3.0 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: V = 1.4 to 2.4 V (V = 10 V, I = 0.2 mA)
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