Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S
- RS Stock No.:
- 133-2811
- Mfr. Part No.:
- TPN11003NL,LQ(S
- Brand:
- Toshiba
Subtotal (1 pack of 20 units)*
£4.22
(exc. VAT)
£5.06
(inc. VAT)
FREE delivery for orders over £50.00
- Final 160 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
20 - 80 | £0.211 | £4.22 |
100 - 180 | £0.179 | £3.58 |
200 - 980 | £0.166 | £3.32 |
1000 - 1980 | £0.16 | £3.20 |
2000 + | £0.155 | £3.10 |
*price indicative
- RS Stock No.:
- 133-2811
- Mfr. Part No.:
- TPN11003NL,LQ(S
- Brand:
- Toshiba
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 31 A | |
Maximum Drain Source Voltage | 30 V | |
Series | U-MOSVIII-H | |
Package Type | TSON | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 16 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.3V | |
Minimum Gate Threshold Voltage | 1.3V | |
Maximum Power Dissipation | 19 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Width | 3.1mm | |
Maximum Operating Temperature | +150 °C | |
Length | 3.1mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 7.5 nC @ 10 V | |
Height | 0.85mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 30 V | ||
Series U-MOSVIII-H | ||
Package Type TSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 16 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 19 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 3.1mm | ||
Maximum Operating Temperature +150 °C | ||
Length 3.1mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 7.5 nC @ 10 V | ||
Height 0.85mm | ||
Forward Diode Voltage 1.2V | ||
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