Toshiba U-MOSVIII-H N-Channel MOSFET, 40 A, 60 V, 8-Pin SOP TPH11006NL,LQ(S
- RS Stock No.:
- 133-2809
- Distrelec Article No.:
- 304-09-221
- Mfr. Part No.:
- TPH11006NL,LQ(S
- Brand:
- Toshiba
Subtotal (1 pack of 20 units)*
£5.90
(exc. VAT)
£7.08
(inc. VAT)
FREE delivery for orders over £50.00
- 980 unit(s) ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 20 + | £0.295 | £5.90 |
*price indicative
- RS Stock No.:
- 133-2809
- Distrelec Article No.:
- 304-09-221
- Mfr. Part No.:
- TPH11006NL,LQ(S
- Brand:
- Toshiba
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOP | |
| Series | U-MOSVIII-H | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 17 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 34 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Width | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 0.95mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOP | ||
Series U-MOSVIII-H | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 17 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 34 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Width 5mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 0.95mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- JP
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