Toshiba U-MOSVIII-H N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1,S1X(S

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Subtotal (1 pack of 5 units)*

£6.89

(exc. VAT)

£8.27

(inc. VAT)

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  • 20 unit(s) ready to ship
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Per Pack*
5 - 20£1.378£6.89
25 - 45£1.242£6.21
50 - 120£1.132£5.66
125 - 245£1.058£5.29
250 +£1.044£5.22

*price indicative

RS Stock No.:
125-0528
Mfr. Part No.:
TK100E06N1,S1X(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

263 A

Maximum Drain Source Voltage

60 V

Series

U-MOSVIII-H

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

255 W

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.16mm

Width

4.45mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

15.1mm

Forward Diode Voltage

1.2V

COO (Country of Origin):
JP


MOSFET Transistors, Toshiba

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