Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL
- RS Stock No.:
- 171-2205
- Mfr. Part No.:
- TPHR8504PL
- Brand:
- Toshiba
Subtotal (1 reel of 5000 units)*
£6,530.00
(exc. VAT)
£7,835.00
(inc. VAT)
FREE delivery for orders over £50.00
- 999,995,000 unit(s) shipping from 26 March 2026
Units | Per unit | Per Reel* |
---|---|---|
5000 + | £1.306 | £6,530.00 |
*price indicative
- RS Stock No.:
- 171-2205
- Mfr. Part No.:
- TPHR8504PL
- Brand:
- Toshiba
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 340 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | SOP | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 1.4 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.4V | |
Minimum Gate Threshold Voltage | 1.4V | |
Maximum Power Dissipation | 170 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Length | 5mm | |
Width | 5mm | |
Typical Gate Charge @ Vgs | 103 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Height | 0.95mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 340 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.4V | ||
Maximum Power Dissipation 170 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 5mm | ||
Width 5mm | ||
Typical Gate Charge @ Vgs 103 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Height 0.95mm | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Exempt
Switching Voltage Regulators
Motor Drivers
High-speed switching
Small gate charge: QSW = 23 nC (typ.)
Small output charge: Qoss = 85.4 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 0.7 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA)
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