Toshiba N-Channel MOSFET, 93 A, 100 V, 8-Pin SOP TPH4R50ANH
- RS Stock No.:
- 171-2377
- Mfr. Part No.:
- TPH4R50ANH
- Brand:
- Toshiba
Subtotal (1 pack of 5 units)*
£5.98
(exc. VAT)
£7.175
(inc. VAT)
FREE delivery for orders over £50.00
- 3,685 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 + | £1.196 | £5.98 |
*price indicative
- RS Stock No.:
- 171-2377
- Mfr. Part No.:
- TPH4R50ANH
- Brand:
- Toshiba
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 93 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | SOP | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 4.5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 78 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Width | 5mm | |
Typical Gate Charge @ Vgs | 58 nC @ 10 V | |
Length | 5mm | |
Height | 0.95mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 93 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 78 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 5mm | ||
Typical Gate Charge @ Vgs 58 nC @ 10 V | ||
Length 5mm | ||
Height 0.95mm | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Exempt
Switching Voltage Regulators
Motor Drivers
Small, thin package
High-speed switching
Small gate charge: QSW = 22 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
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