P-Channel MOSFET, 18 A, 30 V, 8-Pin Toshiba TPC8117(TE12L,Q)

RS Stock No.:: 582-470
Mfr. Part No.:: TPC8117(TE12L,Q)
Brand:: Toshiba

P-Channel MOSFET, 18 A, 30 V, 8-Pin Toshiba TPC8117(TE12L,Q)

95 In stock for delivery within 5 working days

Not available for guaranteed pre 9am/10am delivery

Price Each (In a Pack of 5)

£1.214

(exc. VAT)

£1.457

(inc. VAT)

Units	Per unit	Per Pack*
5 - 45	£1.214	£6.07
50 - 95	£0.952	£4.76
100 - 245	£0.872	£4.36
250 - 495	£0.85	£4.25
500 +	£0.828	£4.14

*price indicative

RS Stock No.:: 582-470
Mfr. Part No.:: TPC8117(TE12L,Q)
Brand:: Toshiba

TPC8117 P-channel MOSFET 18A 30V
ESD Control Selection Guide V1

RS Stock No.:: 582-470
Mfr. Part No.:: TPC8117(TE12L,Q)
Brand:: Toshiba

TPC8117 P-channel MOSFET 18A 30V
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	30 V
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Maximum Power Dissipation	1.9 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	130 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	1.5mm

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	30 V
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Maximum Power Dissipation	1.9 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	130 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	1.5mm

P-Channel MOSFET, 18 A, 30 V, 8-Pin Toshiba TPC8117(TE12L,Q)

MOSFET P-Channel, TPC Series, Toshiba

MOSFET P-Channel, TPC Series, Toshiba