Toshiba P-Channel MOSFET, 18 A, 30 V, 8-Pin TPC8117(TE12L,Q)
- RS Stock No.:
- 582-470
- Mfr. Part No.:
- TPC8117(TE12L,Q)
- Brand:
- Toshiba
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 582-470
- Mfr. Part No.:
- TPC8117(TE12L,Q)
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | P | |
Maximum Continuous Drain Current | 18 A | |
Maximum Drain Source Voltage | 30 V | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 4 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 1.9 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type P | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 30 V | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 1.9 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
- COO (Country of Origin):
- JP
MOSFET P-Channel, TPC Series, Toshiba
MOSFET Transistors, Toshiba
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