Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L

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Subtotal (1 pack of 10 units)*

£8.09

(exc. VAT)

£9.71

(inc. VAT)

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  • 180 unit(s) ready to ship
  • Plus 70 unit(s) shipping from 30 October 2025
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Units
Per unit
Per Pack*
10 - 40£0.809£8.09
50 - 90£0.733£7.33
100 - 990£0.564£5.64
1000 +£0.348£3.48

*price indicative

Packaging Options:
RS Stock No.:
171-2492
Mfr. Part No.:
TJ8S06M3L
Brand:
Toshiba
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Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +10 V

Length

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Height

2.3mm

RoHS Status: Not Applicable

COO (Country of Origin):
JP
Applications
Automotive
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V)
Low leakage current: IDSS = -10 μA (max) (VDS = -60V)
Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

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