Toshiba N-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TK8S06K3L

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Subtotal (1 pack of 10 units)*

£7.69

(exc. VAT)

£9.23

(inc. VAT)

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  • Plus 1,360 unit(s) shipping from 12 November 2025
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Units
Per unit
Per Pack*
10 - 40£0.769£7.69
50 - 90£0.659£6.59
100 - 990£0.576£5.76
1000 +£0.512£5.12

*price indicative

Packaging Options:
RS Stock No.:
171-2501
Mfr. Part No.:
TK8S06K3L
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

7mm

Height

2.3mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

RoHS Status: Not Applicable

COO (Country of Origin):
JP
Automotive
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA

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