Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L

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Subtotal (1 reel of 2000 units)*

£1,518.00

(exc. VAT)

£1,822.00

(inc. VAT)

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  • 2,000 unit(s) ready to ship
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Units
Per unit
Per Reel*
2000 - 2000£0.759£1,518.00
4000 - 8000£0.70£1,400.00
10000 +£0.65£1,300.00

*price indicative

RS Stock No.:
171-2426
Mfr. Part No.:
TK60S06K3L
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

60 nC @ 10 V

Width

7mm

Length

6.5mm

Height

2.3mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

RoHS Status: Exempt

COO (Country of Origin):
JP
Automotive
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)

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