Toshiba N-Channel MOSFET, 7.5 A, 250 V, 3-Pin DPAK TK8P25DA,RQ(S

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RS Stock No.:
174-4116
Mfr. Part No.:
TK8P25DA,RQ(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

250 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Typical Gate Charge @ Vgs

16 nC @ 10 V

Length

6.6mm

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

2.3mm

COO (Country of Origin):
CN
The Toshiba MOSFET is silicon N-channel MOS with 3 pin and surface mounting type.

Low drain-source on-resistance
Low leakage current

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