Toshiba N-Channel MOSFET, 7.5 A, 250 V, 3-Pin DPAK TK8P25DA,RQ(S
- RS Stock No.:
- 174-4116
- Mfr. Part No.:
- TK8P25DA,RQ(S
- Brand:
- Toshiba
Currently unavailable
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- RS Stock No.:
- 174-4116
- Mfr. Part No.:
- TK8P25DA,RQ(S
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 7.5 A | |
Maximum Drain Source Voltage | 250 V | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 500 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 1.5V | |
Maximum Power Dissipation | 55 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | +20 V | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 16 nC @ 10 V | |
Length | 6.6mm | |
Width | 6.1mm | |
Number of Elements per Chip | 1 | |
Forward Diode Voltage | 1.7V | |
Height | 2.3mm | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.5 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 500 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 55 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 16 nC @ 10 V | ||
Length 6.6mm | ||
Width 6.1mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.7V | ||
Height 2.3mm | ||
- COO (Country of Origin):
- CN
The Toshiba MOSFET is silicon N-channel MOS with 3 pin and surface mounting type.
Low drain-source on-resistance
Low leakage current
Low leakage current
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