Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

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Subtotal (1 reel of 2000 units)*

£1,836.00

(exc. VAT)

£2,204.00

(inc. VAT)

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  • 2,000 unit(s) ready to ship
  • Plus 999,996,000 unit(s) shipping from 02 July 2026
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Units
Per unit
Per Reel*
2000 +£0.918£1,836.00

*price indicative

RS Stock No.:
171-2416
Mfr. Part No.:
TK100S04N1L
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

180 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

6.5mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

76 nC @ 10 V

Width

7mm

Forward Diode Voltage

1.2V

Height

2.3mm

Automotive Standard

AEC-Q101

RoHS Status: Exempt

COO (Country of Origin):
JP
Applications
Automotive
Switching Voltage Regulators
Motor Drivers
Features
Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)

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