Toshiba N-Channel MOSFET, 65 A, 40 V, 3-Pin DPAK TK65S04N1L

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Subtotal (1 reel of 2000 units)*

£1,342.00

(exc. VAT)

£1,610.00

(inc. VAT)

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  • 2,000 unit(s) ready to ship
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Per Reel*
2000 +£0.671£1,342.00

*price indicative

RS Stock No.:
171-2428
Mfr. Part No.:
TK65S04N1L
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

7mm

Length

6.5mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Height

2.3mm

Forward Diode Voltage

1.2V

RoHS Status: Exempt

COO (Country of Origin):
JP
Applications
Automotive
Motor Drivers
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)

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