Toshiba P-Channel MOSFET, 60 A, 40 V, 3-Pin DPAK TJ60S04M3L

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Subtotal (1 pack of 5 units)*

£7.21

(exc. VAT)

£8.65

(inc. VAT)

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  • 55 unit(s) ready to ship
  • Plus 10 unit(s) ready to ship from another location
  • Plus 1,385 unit(s) shipping from 20 October 2025
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Per unit
Per Pack*
5 +£1.442£7.21

*price indicative

Packaging Options:
RS Stock No.:
171-2485
Mfr. Part No.:
TJ60S04M3L
Brand:
Toshiba
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Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +10 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

125 nC @ 10 V

Length

6.5mm

Width

7mm

Number of Elements per Chip

1

Height

2.3mm

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

RoHS Status: Not Applicable

COO (Country of Origin):
JP
Applications
Automotive
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 7.0 mΩ (typ.) (VGS = -10 V)
Low leakage current: IDSS = -10 μA (max) (VDS = -40 V)
Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

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