onsemi NTMFS006N08MC Dual N-Channel MOSFET, 32 A, 80 V, 8-Pin PQFN8 NTMFS006N08MC
- RS Stock No.:
- 205-2424
- Mfr. Part No.:
- NTMFS006N08MC
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£2,367.00
(exc. VAT)
£2,841.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.789 | £2,367.00 |
*price indicative
- RS Stock No.:
- 205-2424
- Mfr. Part No.:
- NTMFS006N08MC
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 32 A | |
Maximum Drain Source Voltage | 80 V | |
Package Type | PQFN8 | |
Series | NTMFS006N08MC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.006 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 2 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 32 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PQFN8 | ||
Series NTMFS006N08MC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.006 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
The ON Semiconductor Power Trench series 150V N-Channel MV MOSFET is produced using advanced process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Max rDS(on) = 11.5mohm at VGS is 10V, ID is 35A
Low Conduction Loss
Max rDS(on) is 13.2mohm at VGS is 8V, ID is 18A
50% lower Qrr than other mosfet suppliers
Lowers switching noise /EMI
MSL1 robust package design
100% UIL tested
Low Conduction Loss
Max rDS(on) is 13.2mohm at VGS is 8V, ID is 18A
50% lower Qrr than other mosfet suppliers
Lowers switching noise /EMI
MSL1 robust package design
100% UIL tested
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