onsemi N-Channel MOSFET, 116 A, 80 V, 8-Pin PQFN8 FDMS4D5N08LC
- RS Stock No.:
- 195-2498
- Mfr. Part No.:
- FDMS4D5N08LC
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£2,652.00
(exc. VAT)
£3,183.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.884 | £2,652.00 |
*price indicative
- RS Stock No.:
- 195-2498
- Mfr. Part No.:
- FDMS4D5N08LC
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 116 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PQFN8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 7.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 113.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5mm | |
| Length | 5.85mm | |
| Typical Gate Charge @ Vgs | 51 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 116 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PQFN8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 7.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 113.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Width 5mm | ||
Length 5.85mm | ||
Typical Gate Charge @ Vgs 51 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with soft body diode.
Shielded Gate MOSFET Technology
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 37 A
Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 29 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
Logic Level drive Capable
Application
This product is general usage and suitable for many different applications.
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 37 A
Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 29 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
Logic Level drive Capable
Application
This product is general usage and suitable for many different applications.
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