onsemi N-Channel MOSFET, 116 A, 80 V, 8-Pin PQFN8 FDMS4D5N08LC

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Subtotal (1 pack of 10 units)*

£11.23

(exc. VAT)

£13.48

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90£1.123£11.23
100 - 240£0.968£9.68
250 +£0.861£8.61

*price indicative

Packaging Options:
RS Stock No.:
195-2499
Mfr. Part No.:
FDMS4D5N08LC
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

116 A

Maximum Drain Source Voltage

80 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Typical Gate Charge @ Vgs

51 nC @ 10 V

Number of Elements per Chip

1

Length

5.85mm

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

1.05mm

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with soft body diode.

Shielded Gate MOSFET Technology
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 37 A
Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 29 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
Logic Level drive Capable
Application
This product is general usage and suitable for many different applications.

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