onsemi N-Channel MOSFET, 67 A, 120 V, 8-Pin PQFN 5 x 6 FDMS4D0N12C
- RS Stock No.:
- 178-4409
- Mfr. Part No.:
- FDMS4D0N12C
- Brand:
- onsemi
Subtotal (1 pack of 10 units)*
£13.08
(exc. VAT)
£15.70
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,970 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | £1.308 | £13.08 |
*price indicative
- RS Stock No.:
- 178-4409
- Mfr. Part No.:
- FDMS4D0N12C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 67 A | |
| Maximum Drain Source Voltage | 120 V | |
| Package Type | PQFN 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 106 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 6mm | |
| Typical Gate Charge @ Vgs | 36 nC @ 6 V | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 67 A | ||
Maximum Drain Source Voltage 120 V | ||
Package Type PQFN 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 106 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 6mm | ||
Typical Gate Charge @ Vgs 36 nC @ 6 V | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
- COO (Country of Origin):
- PH
This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Shielded Gate MOSFET Technology
Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A
Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
Applications:
This product is general usage and suitable for many different applications.
End Products:
AC-DC and DC-DC Power Supplies
Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A
Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
Applications:
This product is general usage and suitable for many different applications.
End Products:
AC-DC and DC-DC Power Supplies
Related links
- onsemi N-Channel MOSFET 120 V, 8-Pin PQFN 5 x 6 FDMS4D0N12C
- onsemi N-Channel MOSFET 150 V, 8-Pin PQFN 5 x 6 NTMFS022N15MC
- onsemi N-Channel MOSFET 100 V, 8-Pin PQFN 5 x 6 NTMFS7D8N10GTWG
- onsemi PowerTrench N-Channel MOSFET 150 V, 8-Pin PQFN 5 x 6 NTMFS011N15MC
- Infineon HEXFET Silicon N-Channel MOSFET 25 V, 4-Pin PQFN 5 x 6 IRFH5250TRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 30 V, 8-Pin PQFN 5 x 6 IRFH5300TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 40 V, 8-Pin PQFN 5 x 6 AUIRFN8459TR
- Infineon HEXFET N-Channel MOSFET 25 V, 8-Pin PQFN 5 x 6 IRFH5250DTRPBF