onsemi N-Channel MOSFET, 67 A, 120 V, 8-Pin PQFN 5 x 6 FDMS4D0N12C

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£13.08

(exc. VAT)

£15.70

(inc. VAT)

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RS Stock No.:
178-4409
Mfr. Part No.:
FDMS4D0N12C
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

67 A

Maximum Drain Source Voltage

120 V

Package Type

PQFN 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

106 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5mm

Typical Gate Charge @ Vgs

36 nC @ 6 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

6mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

1.05mm

COO (Country of Origin):
PH
This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Shielded Gate MOSFET Technology
Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A
Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design


Applications:
This product is general usage and suitable for many different applications.
End Products:
AC-DC and DC-DC Power Supplies

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