onsemi N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 FDMS86181

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
181-1857
Mfr. Part No.:
FDMS86181
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

124 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

42 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5.85mm

Width

5mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.05mm

Forward Diode Voltage

1.3V

COO (Country of Origin):
PH
This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Shielded Gate MOSFET Technology
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
ADD
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
This product is general usage and suitable for many different applications.

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