onsemi N-Channel MOSFET, 235 A, 60 V, 8-Pin DFN8 5 x 6 NTMFSC1D6N06CL
- RS Stock No.:
- 195-8746
- Mfr. Part No.:
- NTMFSC1D6N06CL
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 195-8746
- Mfr. Part No.:
- NTMFSC1D6N06CL
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 235 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | DFN8 5 x 6 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 2.3 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 166 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Typical Gate Charge @ Vgs | 91 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Length | 6mm | |
Width | 5mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Height | 0.95mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 235 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DFN8 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 2.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 166 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 91 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 6mm | ||
Width 5mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.95mm | ||
This N-Channel MOSFET is produced using ON Semiconductors advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Top and bottom sided exposed in standard 5x6mm pin-out
Improved thermal dissipation through top and bottom side of the package
Ultra low RDS-on
Reduced conduction loss
Reduced capacitances and package inductance
Reduced switching loss
Applications
Synchronous Rectifier in AC-DC and DC-DC power supplies
Motor Switch
Load switch
Improved thermal dissipation through top and bottom side of the package
Ultra low RDS-on
Reduced conduction loss
Reduced capacitances and package inductance
Reduced switching loss
Applications
Synchronous Rectifier in AC-DC and DC-DC power supplies
Motor Switch
Load switch
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