onsemi N-Channel MOSFET, 22 A, 80 V, 8-Pin PQFN8 FDMC007N08LCDC

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Subtotal (1 pack of 10 units)*

£13.43

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£16.12

(inc. VAT)

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10 - 90£1.343£13.43
100 - 240£1.158£11.58
250 +£1.004£10.04

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Packaging Options:
RS Stock No.:
178-4558
Mfr. Part No.:
FDMC007N08LCDC
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

80 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Width

3.4mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Length

3.4mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

0.75mm

COO (Country of Origin):
PH
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on on-state resistance and yet maintain in class soft body diode

Shielded Gate MOSFET Technology
Max rDS(on) = 6.8 mΩ at VGS = 10 V, ID = 21 A
Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 17 A
5 V Drive Capable
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
MSL1 robust package design


Dualcool capable package
Applications
Primary DC−DC MOSFET
Synchronous Rectifier in DC−DC and AC−DC
Motor Drive
Solar

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