onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK, SOT-669 NVMYS025N06CLTWG

Subtotal (1 reel of 3000 units)*

£783.00

(exc. VAT)

£939.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.261£783.00

*price indicative

RS Stock No.:
195-2551
Mfr. Part No.:
NVMYS025N06CLTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

43 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5mm

Typical Gate Charge @ Vgs

5.8 @ 10 V nC

Maximum Operating Temperature

+175 °C

Width

4.25mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Height

1.15mm

Forward Diode Voltage

1.2V

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free

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