onsemi N-Channel MOSFET, 133 A, 60 V, 4-Pin LFPAK, SOT-669 NVMYS3D3N06CLTWG

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
195-2512
Mfr. Part No.:
NVMYS3D3N06CLTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

133 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

4.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.25mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

40.7 @ 10 V nC

Length

5mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Height

1.15mm

Minimum Operating Temperature

-55 °C

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free

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