onsemi N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS7D3N04CLTWG

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Subtotal (1 reel of 3000 units)*

£867.00

(exc. VAT)

£1,041.00

(inc. VAT)

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RS Stock No.:
195-2536
Mfr. Part No.:
NVMYS7D3N04CLTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

4.25mm

Typical Gate Charge @ Vgs

7 nC @ 4.5 V

Length

5mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

1.15mm

Forward Diode Voltage

1.2V

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free

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