onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS1D3N04CTWG

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Subtotal (1 reel of 3000 units)*

£2,280.00

(exc. VAT)

£2,730.00

(inc. VAT)

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  • Final 3,000 unit(s), ready to ship
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3000 +£0.76£2,280.00

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RS Stock No.:
185-8162
Mfr. Part No.:
NVMYS1D3N04CTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

252 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

1.15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

134 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Length

5mm

Width

4.25mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.2mm

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