N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK, SOT-669 onsemi NVMYS1D3N04CTWG
- RS Stock No.:
- 185-8162
- Mfr. Part No.:
- NVMYS1D3N04CTWG
- Brand:
- onsemi
Available to back order for despatch 03/09/2024
Added
Price Each (On a Reel of 3000)
£0.773
(exc. VAT)
£0.928
(inc. VAT)
| Units | Per unit | Per Reel* |
| 3000 + | £0.773 | £2,319.00 |
| *price indicative | ||
- RS Stock No.:
- 185-8162
- Mfr. Part No.:
- NVMYS1D3N04CTWG
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Non Compliant
- COO (Country of Origin):
- PH
Product Details
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 252 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | LFPAK, SOT-669 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 1.15 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 134 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 75 nC @ 10 V |
| Width | 4.25mm |
| Length | 5mm |
| Maximum Operating Temperature | +175 °C |
| Height | 1.2mm |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |