onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS1D3N04CTWG

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Subtotal (1 reel of 3000 units)*

£2,280.00

(exc. VAT)

£2,730.00

(inc. VAT)

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RS Stock No.:
185-8162
Mfr. Part No.:
NVMYS1D3N04CTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

252 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

1.15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

134 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.25mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

75 nC @ 10 V

Length

5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Height

1.2mm

Non Compliant

COO (Country of Origin):
PH
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free

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