- RS Stock No.:
- 178-4305
- Mfr. Part No.:
- NVMFS5C638NLT1G
- Brand:
- onsemi
1500 In stock - FREE next working day delivery available
Added
Price Each (On a Reel of 1500)
£0.869
(exc. VAT)
£1.043
(inc. VAT)
Units | Per unit | Per Reel* |
1500 + | £0.869 | £1,303.50 |
*price indicative |
- RS Stock No.:
- 178-4305
- Mfr. Part No.:
- NVMFS5C638NLT1G
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Industry Standard Small Footprint 5 x 6 mm Package
Low RDS(on)
Low QG and Capacitance
NVMFS5C638NLWF - Wettable Flank Option
PPAP capable
Benefits
Compact Design and Standard footprint for direct drop-in
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
Industry Standard Small Footprint 5 x 6 mm Package
Low RDS(on)
Low QG and Capacitance
NVMFS5C638NLWF - Wettable Flank Option
PPAP capable
Benefits
Compact Design and Standard footprint for direct drop-in
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 133 A |
Maximum Drain Source Voltage | 60 V |
Package Type | DFN |
Mounting Type | Surface Mount |
Pin Count | 5 |
Maximum Drain Source Resistance | 3 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 100 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Width | 6.1mm |
Length | 5.1mm |
Typical Gate Charge @ Vgs | 18.4 nC @ 4.5 V |
Forward Diode Voltage | 1.2V |
Height | 1.05mm |
Minimum Operating Temperature | -55 °C |