onsemi N-Channel MOSFET, 49 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS8D0N04CTWG

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
195-2540
Mfr. Part No.:
NVMYS8D0N04CTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

49 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

8.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Length

5mm

Width

4.25mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.15mm

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free

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