onsemi N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK, SOT-669 NTMYS025N06CLTWG
- RS Stock No.:
- 195-2539
- Mfr. Part No.:
- NTMYS025N06CLTWG
- Brand:
- onsemi
Save 25% when you buy 300 units
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£23.10
(exc. VAT)
£27.60
(inc. VAT)
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- 3,000 unit(s) shipping from 14 October 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 30 - 90 | £0.77 | £23.10 |
| 120 - 270 | £0.664 | £19.92 |
| 300 + | £0.576 | £17.28 |
*price indicative
- RS Stock No.:
- 195-2539
- Mfr. Part No.:
- NTMYS025N06CLTWG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | LFPAK, SOT-669 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 43 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 24 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 5mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.25mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 5.8 @ 10 V nC | |
| Height | 1.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type LFPAK, SOT-669 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 43 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 24 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 5mm | ||
Maximum Operating Temperature +175 °C | ||
Width 4.25mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 5.8 @ 10 V nC | ||
Height 1.15mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
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