onsemi N-Channel MOSFET, 38 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS010N04CLTWG

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Subtotal (1 pack of 30 units)*

£14.10

(exc. VAT)

£16.80

(inc. VAT)

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30 - 90£0.47£14.10
120 - 270£0.405£12.15
300 +£0.351£10.53

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Packaging Options:
RS Stock No.:
195-2546
Mfr. Part No.:
NVMYS010N04CLTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

17.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

7.3 nC @ 10 V

Width

4.25mm

Length

5mm

Height

1.15mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free

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