onsemi N-Channel MOSFET, 38 A, 40 V, 4-Pin LFPAK, SOT-669 NTMYS010N04CLTWG

Subtotal (1 reel of 3000 units)*

£1,341.00

(exc. VAT)

£1,608.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.447£1,341.00

*price indicative

RS Stock No.:
195-2530
Mfr. Part No.:
NTMYS010N04CLTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

17.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.25mm

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

7.3 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free

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