STMicroelectronics N-Channel MOSFET Transistor, 15 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STL26N60DM6

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Subtotal (1 pack of 5 units)*

£25.56

(exc. VAT)

£30.67

(inc. VAT)

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Per Pack*
5 - 20£5.112£25.56
25 - 45£4.806£24.03
50 - 120£4.55£22.75
125 - 245£4.29£21.45
250 +£4.096£20.48

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Packaging Options:
RS Stock No.:
192-4882
Mfr. Part No.:
STL26N60DM6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 8 x 8 HV

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

215 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

8.1mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

24 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

8.1mm

Height

0.9mm

Forward Diode Voltage

1.6V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness
Zener-protected

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