STMicroelectronics N-Channel MOSFET Transistor, 25 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STL45N60DM6
- RS Stock No.:
- 192-4899
- Mfr. Part No.:
- STL45N60DM6
- Brand:
- STMicroelectronics
Subtotal (1 pack of 2 units)*
£8.05
(exc. VAT)
£9.66
(inc. VAT)
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In Stock
- 64 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | £4.025 | £8.05 |
*price indicative
- RS Stock No.:
- 192-4899
- Mfr. Part No.:
- STL45N60DM6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | PowerFLAT 8 x 8 HV | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.75V | |
| Minimum Gate Threshold Voltage | 3.25V | |
| Maximum Power Dissipation | 160 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Width | 8.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V | |
| Length | 8.1mm | |
| Height | 0.9mm | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type PowerFLAT 8 x 8 HV | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.75V | ||
Minimum Gate Threshold Voltage 3.25V | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±25 V | ||
Width 8.1mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 44 nC @ 10 V | ||
Length 8.1mm | ||
Height 0.9mm | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
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