STMicroelectronics MDmesh M5 N-Channel MOSFET, 22 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STL36N55M5
- RS Stock No.:
- 920-8714
- Mfr. Part No.:
- STL36N55M5
- Brand:
- STMicroelectronics
Subtotal (1 reel of 3000 units)*
£8,232.00
(exc. VAT)
£9,879.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £2.744 | £8,232.00 |
*price indicative
- RS Stock No.:
- 920-8714
- Mfr. Part No.:
- STL36N55M5
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 22 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | PowerFLAT 8 x 8 HV | |
| Series | MDmesh M5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 90 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 2.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Width | 8mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 62 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 8mm | |
| Height | 0.95mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type PowerFLAT 8 x 8 HV | ||
Series MDmesh M5 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 2.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 8mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 62 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 8mm | ||
Height 0.95mm | ||
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