STMicroelectronics N-Channel MOSFET Transistor, 25 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STL45N60DM6
- RS Stock No.:
- 192-4659
- Mfr. Part No.:
- STL45N60DM6
- Brand:
- STMicroelectronics
Subtotal (1 reel of 3000 units)*
£9,168.00
(exc. VAT)
£11,001.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 07 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £3.056 | £9,168.00 |
*price indicative
- RS Stock No.:
- 192-4659
- Mfr. Part No.:
- STL45N60DM6
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | PowerFLAT 8 x 8 HV | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.75V | |
| Minimum Gate Threshold Voltage | 3.25V | |
| Maximum Power Dissipation | 160 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V | |
| Width | 8.1mm | |
| Length | 8.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.5V | |
| Height | 0.9mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type PowerFLAT 8 x 8 HV | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.75V | ||
Minimum Gate Threshold Voltage 3.25V | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±25 V | ||
Typical Gate Charge @ Vgs 44 nC @ 10 V | ||
Width 8.1mm | ||
Length 8.1mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.5V | ||
Height 0.9mm | ||
Minimum Operating Temperature -55 °C | ||
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