STMicroelectronics ST8L60 Type N-Channel Single MOSFETs, 39 A, 600 V Enhancement, 5-Pin PowerFLAT ST8L60N065DM9

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

£4.08

(exc. VAT)

£4.90

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 299 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£4.08
10 - 49£3.30
50 - 99£2.53
100 +£2.04

*price indicative

RS Stock No.:
648-108
Mfr. Part No.:
ST8L60N065DM9
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

39A

Maximum Drain Source Voltage Vds

600V

Series

ST8L60

Package Type

PowerFLAT

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

66nC

Maximum Power Dissipation Pd

202W

Maximum Operating Temperature

150°C

Height

0.95mm

Standards/Approvals

No

Width

8.10 mm

Length

8.10mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Low gate charge

Low input capacitance and resistance

100 percent avalanche tested

Excellent switching performance

PowerFLAT 8x8 HV package

RoHS compliant

Related links