STMicroelectronics STripFET H7 N-Channel MOSFET, 110 A, 100 V, 8-Pin PowerFLAT 5 x 6 STL110N10F7
- RS Stock No.:
- 920-6648
- Mfr. Part No.:
- STL110N10F7
- Brand:
- STMicroelectronics
Subtotal (1 reel of 3000 units)*
£3,165.00
(exc. VAT)
£3,798.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,000 unit(s) shipping from 24 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £1.055 | £3,165.00 |
*price indicative
- RS Stock No.:
- 920-6648
- Mfr. Part No.:
- STL110N10F7
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 110 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | STripFET H7 | |
| Package Type | PowerFLAT 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 5.4mm | |
| Number of Elements per Chip | 1 | |
| Width | 6.35mm | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Height | 0.95mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 100 V | ||
Series STripFET H7 | ||
Package Type PowerFLAT 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 5.4mm | ||
Number of Elements per Chip 1 | ||
Width 6.35mm | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Height 0.95mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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